Dr. Basab Das

Dr. Basab Das

Assistant Professor



  • Bachelors of technology in Electronics and Communication 2010 North Eastern Hill University
  • Master's of Technology in Microelectronics and VLSI Design 2014 National Institute of Technology Silchar
  • Ph.D in Semiconductor Device Physics 2022National Institute of Technology Silchar


  • Rupam Goswami and Basab Das, “Behaviour of Transmission Probability in a Single Rectangular Potential Barrier at Constant Barrier Height-Barrier Width Product,”The International Journal of Engineering and Science (The IJES) [ISSN(e): 2319-1813; ISSN(p): 2319-1805], Volume-1, Issue-1 in November, 2012.
  • R.Goswami, P.K. De and B.Das. “Study Of Some Properties Of Square Of Whole Number,” International Journal of Computer Application, v.112,no. 16, pp 4-9, Feb., 2015.
  • B. Das and B. Bhowmick, "Effect of Curie Temperature on Ferroelectric Tunnel FET and Its RF/Analog Performance," in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 68, no. 4, pp. 1437-1441, April 2021, doi: 10.1109/TUFFC.2020.3033761
  • B.Das and B. Bhowmick, “Noise behavior of ferro electric tunnel FET,” Microelectronic Journal, vol. 96, pp. 104677-104682, Nov. 2019. doi:10.1016/j.mejo.2019.104677.
  • B.Das, R.Goswami and B.Bhowmick. “A Physics Based Potential and Electric Field Model of a Nanoscale rectangular high-K gate dielectric HEMT,” Pramana (Springer India), Vol .86, Issue. 4, pp 723–736, April ,2016
  • B.Bhowmick, R.Goswami and B.Das. “ A Mathematical Model and an Algorithm for Transmission in Single Rectangular Potential Barriers,” International Journal of Pure and Applied Mathematics, v.101, no.5, pp 605-615, Jun., 2015

Award, Fellowship & Recognition

  • NPTEL Online Certification (Swayam), MoE, Govt. of India : July, 2022 – September,2022 Course: - Developing Soft Skills and Personality (78%)