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Dr. Basab Das

Dr. Basab Das

Assistant Professor

Biography

Dr. Basab Das is an Assistant Professor in the Department of Electronics and Communication Engineering at GCU, with a rich educational background and a decade of teaching experience. Holding a Ph.D., M.Tech, and B.Tech from prestigious centrally funded institutes, I am deeply immersed in the world of VLSI Physical Design, Semiconductor devices, and mixed-signal circuit design.

My journey in academia has been augmented by hands-on experience with industry-standard tools such as IC Compiler, Star-RC, and Cadence Virtuoso. Recently completing an intensive professional training on VLSI Physical Design, I honed my skills further, focusing on Synopsys IC Compiler and related tools & methodologies.

With 20+ publications in esteemed journals and conferences, my dedication to advancing research in the field is evident. At GCU, my passion lies in not only disseminating knowledge but also in fostering critical thinking and innovation among my students. I am committed to nurturing the next generation of engineers, equipping them with the expertise and skills required to thrive in the rapidly evolving landscape of Electronics and Communication Engineering.

 

Education

  • Bachelors of technology in Electronics and Communication 2010 North Eastern Hill University
  • Master's of Technology in Microelectronics and VLSI Design 2014 National Institute of Technology Silchar
  • Ph.D in Semiconductor Device Physics 2022National Institute of Technology Silchar

Publications

  • Rupam Goswami and Basab Das, “Behaviour of Transmission Probability in a Single Rectangular Potential Barrier at Constant Barrier Height-Barrier Width Product,”The International Journal of Engineering and Science (The IJES) [ISSN(e): 2319-1813; ISSN(p): 2319-1805], Volume-1, Issue-1 in November, 2012.
  • R.Goswami, P.K. De and B.Das. “Study Of Some Properties Of Square Of Whole Number,” International Journal of Computer Application, v.112,no. 16, pp 4-9, Feb., 2015.
  • B. Das and B. Bhowmick, "Effect of Curie Temperature on Ferroelectric Tunnel FET and Its RF/Analog Performance," in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 68, no. 4, pp. 1437-1441, April 2021, doi: 10.1109/TUFFC.2020.3033761
  • B.Das and B. Bhowmick, “Noise behavior of ferro electric tunnel FET,” Microelectronic Journal, vol. 96, pp. 104677-104682, Nov. 2019. doi:10.1016/j.mejo.2019.104677.
  • B.Das, R.Goswami and B.Bhowmick. “A Physics Based Potential and Electric Field Model of a Nanoscale rectangular high-K gate dielectric HEMT,” Pramana (Springer India), Vol .86, Issue. 4, pp 723–736, April ,2016
  • B.Bhowmick, R.Goswami and B.Das. “ A Mathematical Model and an Algorithm for Transmission in Single Rectangular Potential Barriers,” International Journal of Pure and Applied Mathematics, v.101, no.5, pp 605-615, Jun., 2015

Award, Fellowship & Recognition

  • NPTEL Online Certification (Swayam), MoE, Govt. of India : July, 2022 – September,2022 Course: - Developing Soft Skills and Personality (78%)

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